Feedback Sensitivity of DBR-Type Laser Diodes

نویسندگان

چکیده

It is shown theoretically that the feedback sensitivity of Distributed Bragg Reflector laser diodes with low-loss section decreases length and also can be decreased by detuning from peak. The effect not only due to a change in effective linewidth enhancement factor, but cavity length. results applied coupled on one side or more ring resonators Such lasers have very weak sensitivity.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Degradation analysis in asymmetric sampled grating distributed feedback laser diodes

This paper presents the experimental observation of the degradation in asymmetric sampled grating DFB lasers by the accelerated life tests. Two degradation phenomena related to the electrical characteristics of LDs are observed during the tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operat...

متن کامل

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...

متن کامل

Sensitivity of synthetic aperture laser optical feedback imaging.

In this paper, we compare the sensitivity of two imaging configurations, both based on laser optical feedback imaging (LOFI). The first one is direct imaging, which uses conventional optical focalization on target, and the second one is made by a synthetic aperture (SA) laser, which uses numerical focalization. We show that SA configuration allows us to obtain good resolutions with high working...

متن کامل

InGaN-BASED LASER DIODES

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...

متن کامل

Pulse Testing Of Laser Diodes

L-I-V Testing Basic Light intensity-Current-Voltage (L-I-V) testing is an I-V test with the addition of optical power measurements. This test is primarily used to sort laser diodes or weed out bad devices before they become part of an assembly. The device under test (DUT) is subjected to a current sweep while the forward voltage drop is recorded for each step in the sweep. Simultaneously, instr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Photonics Journal

سال: 2021

ISSN: ['1943-0655', '1943-0647']

DOI: https://doi.org/10.1109/jphot.2021.3091851